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november 2011 doc id 18472 rev 2 1/14 14 stl26NM60N n-channel 600 v, 0.160 , 19 a powerflat? 8x8 hv ultra low gate charge mdmesh? ii power mosfet features 100% avalanche tested low input capacitance and gate charge low gate input resistance applications switching applications description this device is an n-channel mdmesh? v power mosfet based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram order code v dss @ t jmax r ds(on) max i d stl26NM60N 650 v < 0.185 19 a (1) 1. the value is rated according to r thj-case 3 3 3 ' $ 0ower&,!4?x(6 "ottomview !-v $ ' 3 table 1. device summary order code marking package packaging stl26NM60N 26NM60N powerflat? 8x8 hv tape and reel www.st.com free datasheet http://www.datasheetlist.com/
contents stl26NM60N 2/14 doc id 18472 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 free datasheet http://www.datasheetlist.com/
stl26NM60N electrical ratings doc id 18472 rev 2 3/14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 600 v v gs gate-source voltage 25 v i d (1) 1. the value is rated according to r thj-case drain current (continuous) at t c = 25 c 19 a i d (1) drain current (continuous) at t c = 100 c 12 a i d (2) 2. when mounted on fr-4 board of inch2, 2oz cu drain current (continuous) at t amb = 25 c 2.7 a i d (2) drain current (continuous) at t amb = 100 c 1.7 a i dm (2),(3) drain current (pulsed) 10.8 a p tot (2) total dissipation at t amb = 25 c 3 w p tot (1) total dissipation at t c = 25 c 125 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 7.5 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 400 mj dv/dt (3) 3. i sd 19 a, di/dt 400 a/s, v ds peak v (br)dss , v dd = 80% v (br)dss peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.83 c/w r thj-amb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu thermal resistance junction-amb max 45 c/w free datasheet http://www.datasheetlist.com/
electrical characteristics stl26NM60N 4/14 doc id 18472 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v v ds =600 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 10 a 0.160 0.185 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 1800 115 1.1 - pf pf pf c oss(eq) (1) 1. c oss eq. time related is defined as a constant equival ent capacitance giving the sa me charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 480 v, v gs = 0 - 310 - pf r g intrinsic gate resistance f = 1 mhz open drain - 2.8 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 19 a, v gs = 10 v (see figure 14 ) - 60 8.5 30 - nc nc nc free datasheet http://www.datasheetlist.com/
stl26NM60N electrical characteristics doc id 18472 rev 2 5/14 table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 300 v, i d = 10 a, r g = 4.7 , v gs = 10 v (see figure 15 ), (see figure 18 ) - 13 25 85 50 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 19 76 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 19 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 19 a, di/dt = 100 a/s v dd = 100 v (see figure 15 ) - 370 5.8 31.5 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 19 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 15 ) - 450 7.5 32.5 ns c a free datasheet http://www.datasheetlist.com/
electrical characteristics stl26NM60N 6/14 doc id 18472 rev 2 2.1 electrical characterist ics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized v ds vs temperature figure 7. static drain-source on resistance i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am0 8 9 8 7v1 10 -5 10 -4 10 - 3 10 -2 t p ( s ) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 s ingle p u l s e =0.5 zth powerflat 8 x 8 hv v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.02 1.04 1.06 i d =1ma 1.0 8 1.10 am0902 8 v1 r d s (on) 0.15 8 0.156 0.154 0.152 0 4 i d (a) ( ) 2 6 0.160 0.162 0.164 0.166 v g s =10v 0.16 8 10 8 12 14 16 1 8 20 am0 8 9 8 9v1 free datasheet http://www.datasheetlist.com/
stl26NM60N electrical characteristics doc id 18472 rev 2 7/14 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics v g s 6 4 2 0 0 10 q g (nc) (v) 40 8 20 3 0 10 v dd =4 8 0v i d =19a 50 12 3 00 200 100 0 400 500 v d s 60 am0 8 990v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 10000 100 ci ss co ss cr ss am0 33 19v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 125 i d =250 a am0 8 991v1 r d s (on) 1.1 0.9 0.7 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 1. 3 1.5 1.7 1.9 2.1 v g s =10v i d =10a am0 8 992v1 v s d 0 8 i s d (a) (v) 4 20 12 16 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j =-50c t j =150c t j =25c 1.4 am0 8 99 3 v1 free datasheet http://www.datasheetlist.com/
test circuits stl26NM60N 8/14 doc id 18472 rev 2 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive wavefor m figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s free datasheet http://www.datasheetlist.com/
stl26NM60N package mechanical data doc id 18472 rev 2 9/14 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. free datasheet http://www.datasheetlist.com/
package mechanical data stl26NM60N 10/14 doc id 18472 rev 2 table 8. powerflat? 8x8 hv mechanical data dim. mm min. typ. max. a 0.80 0.90 1.00 a1 0.00 0.02 0.05 b 0.95 1.00 1.05 d8.00 e8.00 d2 7.05 7.20 7.30 e2 4.15 4.30 4.40 e2.00 l 0.40 0.50 0.60 aaa 0.10 bbb 0.10 ccc 0.10 free datasheet http://www.datasheetlist.com/
stl26NM60N package mechanical data doc id 18472 rev 2 11/14 figure 19. powerflat? 8x8 hv drawing mechanical data index area top view plane seating 0.08 c bottom view side view pin#1 id d e b a e2 d2 l 0.40 0.20 0.008 c bbb c a b b a aaa c aaa c a1 ccc c 8 222 8 71_rev_b free datasheet http://www.datasheetlist.com/
package mechanical data stl26NM60N 12/14 doc id 18472 rev 2 figure 20. powerflat? 8x8 hv recommended footprint 7.30 1.05 2.00 7.70 4.40 0.60 footprint free datasheet http://www.datasheetlist.com/
stl26NM60N revision history doc id 18472 rev 2 13/14 5 revision history table 9. document revision history date revision changes 14-feb-2011 1 first release. 03-nov-2011 2 section 4: package mechanical data has been updated. minor text changes. free datasheet http://www.datasheetlist.com/
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